BUX98APW high voltage npn power transistor n stmicroelectronics preferred salestype n npn transistor n high voltage capability n high current capability n fast switching speed applications n high frequency and efficency converters n linear and switching industrial equipment description the BUX98APW is a silicon multiepitaxial mesa npn transistor in to-247 plastic package. it is intended for use in industrial applications from single and three-phase mains operation. internal schematic diagram february 2002 1 2 3 to-247 absolute maximum ratings symbol parameter value unit v cer collector-emitter voltage (r be = 10 w ) 1000 v v ces collector-base voltage (v be = 0) 1000 v v ceo collector-emitter voltage (i b = 0) 450 v v ebo emitter-base voltage (i c = 0) 7 v i c collector current 24 a i cm collector peak current (tp < 5 ms) 36 a i b base current 5 a i bm base peak current (t p < 5 ms) 8 a p tot total power dissipation at t case < 25 o c 200 w t stg storage temperature -65 to 150 o c t j max operating junction temperature 150 o c ? 1/4
thermal data r thj-case thermal resistance junction-case max 0.63 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cer collector cut-off current (r be = 5 w ) v ce = 1000 v v ce = 1000 v t c = 125 o c 200 2 m a ma i ces collector cut-off current (v be = 0 ) v ce = 1000 v v ce = 1000 v t c = 125 o c 200 2 m a ma i ceo collector cut-off current (i b = 0) v ce = 450 v 2 ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 2 ma v (br)ebo emitter-base breakdown voltage (i c = 0) i e = 100 ma 7 v v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 200 ma l = 25 mh 450 v v ce(sat) * collector-emitter saturation voltage i c = 16 a i b = 3.2 a 1.2 v v be(sat) * base-emitter saturation voltage i c = 16 a i b = 3.2 a 1.5 v t on t s t f resistive load turn-on time storage time fall time v cc = 150 v i c = 16 a i b1 = - i b2 = 3.2 a 1 3 0.8 m s m s m s * pulsed: pulse duration = 300 m s, duty cycle = 1.5 % BUX98APW 2/4
dim. mm inch min. typ. max. min. typ. max. a 4.7 5.3 0.185 0.209 d 2.2 2.6 0.087 0.102 e 0.4 0.8 0.016 0.031 f 1 1.4 0.039 0.055 f3 2 2.4 0.079 0.094 f4 3 3.4 0.118 0.134 g 10.9 0.429 h 15.3 15.9 0.602 0.626 l 19.7 20.3 0.776 0.779 l3 14.2 14.8 0.559 0.582 l4 34.6 1.362 l5 5.5 0.217 m 2 3 0.079 0.118 p025p to-247 mechanical data BUX98APW 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2002 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com BUX98APW 4/4
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